High-temperature-resistant filler-free insulated gate bipolar transistor sealant and preparation method thereof

The invention discloses a high-temperature-resistant filler-free insulated gate bipolar transistor sealant and a preparation method thereof. The sealant comprises a component A and a component B. The component A comprises 60-70 parts of basic vinyl silicone resin, 25-35 parts of special modified polysiloxane and 0.5-1 part of a high-temperature stable platinum catalyst; the component B comprises the following components in parts by weight: 60-65 parts of basic vinyl silicone resin; 27-30 parts of special modified polysiloxane; 2-3 parts of a cross-linking agent; 1-2 parts of a toughening agent; 0.005-0.015 part of an inhibitor; the end side of the basic vinyl silicone resin contains vinyl, and the content of the vinyl is 0.3-0.6%; the concentration of the platinum catalyst ranges from 2,000 PPM to 3,000 PPM, and the platinum catalyst has excellent high-temperature stability. The sealant provided by the invention can maintain excellent elasticity, adhesion and electrical properties of the sealant at a high tem