Magnetoresistive random access memory device and forming method thereof

The invention relates to a magnetoresistive random access memory (MRAM) device and a forming method thereof. An MRAM unit has an extended upper electrode. In some embodiments, the MRAM unit has a magnetic tunnel junction (MTJ) disposed above the lower conductive electrode. The upper conductive elect...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHUANG XUELI, LIAO JUNHENG, WANG HONGZHUO, CHEN JUNYAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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