Magnetoresistive random access memory device and forming method thereof

The invention relates to a magnetoresistive random access memory (MRAM) device and a forming method thereof. An MRAM unit has an extended upper electrode. In some embodiments, the MRAM unit has a magnetic tunnel junction (MTJ) disposed above the lower conductive electrode. The upper conductive electrode is placed above the magnetic tunnel junction. The first conductive via structure is located in the first dielectric layer and below the lower conductive electrode. The discrete conductive jumper structure is located in the second dielectric layer and below the conductive via structure. A dielectric body composed of a third dielectric material different from the first dielectric material and the second dielectric material extends at least partially and vertically from the first dielectric layer into the second dielectric layer. 本发明涉及一种磁阻式随机存取存储器(MRAM)器件及其形成方法，MRAM单元具有延伸的上部电极。在一些实施例中，MRAM单元具有被设置在下部导电电极上方的磁隧道结(MTJ)。上部导电电极被设置在磁隧道结上方。第一导电通孔结构位于第一介电层中并且下部导电电极的下方。离散的导电跳线结构位于第二介电层中并且导电通孔结构的下方。由不同于第一介电材料和第二介电材料的第三介电材料构