Non-volatile memory array with write failure protection for storage elements

Methods and apparatus for use with non-volatile memory (NVM) arrays having single-level cell (SLC) layers and multi-level cell (MLC) layers, such as triple-level cell (TLC) layers, provide for a coupled SLC/MLC write operation where SLC write protection is combined into a MLC write flow. In an illustrative example, data is written concurrently to SLC and TLC. The SLC data provides a backup for the TLC data in the event the TLC data is defective. The TLC data is verified using, for example, write verification. If the data is successfully verified, the SLC block can be erased or otherwise overwritten with new data. If not, the SLC block can be used to recover the data for storage in a different TLC block. The coupled SLC/MLC write operation may be performed in conjunction with a quick pass write (QPW). 用于具有单层级单元(SLC)层和例如三层级单元(TLC)层等多层级单元(MLC)层的非易失性存储器(NVM)阵列的方法和设备提供耦合SLC/MLC写入操作，其中SLC写入保护被组合成MLC写入流。在说明性实例中，将数据并行写入到SLC和TLC。所述SLC数据为所述TLC数据提供备份，以防所述TLC数据有缺陷。使用例如写入检验来检验所述TLC数据。如果成功地检验所述数据，则可以擦除或另外用新数据来覆写SLC块。如果未成功检