Semiconductor device containing nitrogen

A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes a plurality of barrier layers and a plurality well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located betweenthe first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer. 本发明提供了一种含氮半导体元件，其包括第一型掺杂半导体层、多重量子阱层以及第二型掺杂半导体层。多重量子阱层包括多个能障层以及多个能阱层，这些能阱层与这些能障层交替排列。多重量子阱层位于第一型掺杂半导体层以及第二型掺杂半导体层之间，其中这些能阱层的其中之一与第二型掺杂半导体层连接。