Manufacturing method of IPS type TFT-LCD array substrate and IPS type TFT-LCD array substrate

The invention discloses a manufacturing method of an IPS type TFT-LCD array substrate. The manufacturing method comprises the steps of providing a TFT substrate which comprises a substrate, a TFT array formed on the substrate and a flat layer formed on the TFT array; forming a common electrode on the flat layer; forming an insulating film on the common electrode and the flat layer; placing the TFT substrate on which the common electrode and the insulating film are formed in a reaction chamber, and introducing film forming gases SiH4 and N2O into the reaction chamber to form a silicon oxide layer; and forming a pixel electrode on the silicon oxide layer. According to the manufacturing method, after the insulating film is formed on the common electrode and the flat layer, the silicon oxide layer is formed on the insulating film, so that when the silicon oxide layer is formed, the flat layer can be isolated from the film forming gas through the insulating film, the film forming gas can be prevented from being in