Ultraviolet semiconductor light-emitting element

The invention provides an ultraviolet semiconductor light-emitting element which sequentially comprises a substrate, an n-type semiconductor layer, an aging electric leakage control layer, a quantum well layer and a p-type semiconductor layer from bottom to top, wherein the aging electric leakage control layer is of a superlattice structure composed of a first structural layer and a second structural layer. According to the invention, the aging leakage control layer with the superlattice structure is added between the n-type semiconductor layer and the quantum well layer, so that the aging leakage performance of the ultraviolet semiconductor light-emitting element can be improved. 本发明提供了一种紫外半导体发光元件，从下至上依次包括：衬底、n型半导体层、老化漏电控制层、量子阱层以及p型半导体层，其中所述老化漏电控制层为第一结构层与第二结构层组成的超晶格结构。本发明通过在n型半导体层和量子阱层之间增加具有超晶格结构的老化漏电控制层，能够改善紫外半导体发光元件的老化漏电性能。