P-channel LDMOS device with surface voltage-resistant structure and preparation method thereof

The invention relates to a p-channel LDMOS device with a surface voltage-resistant structure, and belongs to the technical field of semiconductors. A surface super-junction structure is provided for the p-channel LDMOS device, comb-finger-shaped n-type semiconductor strips are prepared on the surfac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WEN HOUDONG, FAN ZHEN, JIANG XUANQING, LUO QIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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