Semiconductor device and method

The invention relates to a semiconductor device and a method. In an embodiment, a device includes: a first source/drain region; a second source/drain region; an interlayer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact being connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact being connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void. 本公开涉及半导体器件及方法。在实施例中，一种器件，包括：第一源极/漏极区域；第二源极/漏极区域；层间电介质(ILD)层，在第一源极/漏极区域和第二源极/漏极区域之上；第一源极/漏极接触件，延伸穿过ILD层，第一源极/漏极接触件被连接到第一源极/漏极区域；第二源极/漏极接触件，延伸穿过ILD层，第二源极/漏极接触件被连接到第二源极/漏极区域；以及隔离特征，在第一源极/漏极接触件和第二源极/漏极接触件之间，该隔离特征包括电介质衬里和空隙，电介质衬里围绕空隙。