PROM (Programmable Read Only Memory) and FPGA (Field Programmable Gate Array) integrated structure based on silicon switching substrate and preparation method thereof

The invention discloses a PROM and FPGA integrated structure based on a silicon switching substrate and a preparation method of the PROM and FPGA integrated structure. An FPGA tube core, a switching plate and a PROM tube core are sequentially stacked on the TSV silicon switching substrate, and the TSV silicon switching substrate, the FPGA tube core, the switching plate and the PROM tube core are bonded through leads. The FPGA tube core, the adapter plate and the PROM tube core are sequentially stacked and bonded on the TSV silicon switching substrate; and by adopting a gold wire ball bonding process, the FPGA chip Pad and the Pad on the TSV silicon switching substrate, the PROM chip Pad and the Pad on the adapter plate, and the Pad on the switching plate and the Pad on the TSV silicon switching substrate are subjected to lead wire sewing in sequence, so that the preparation of the integrated structure is completed. The FPGA tube core and the PROM tube core are efficiently integrated on the silicon chip, and t