SUBSTRATE PROCESSING DEVICE

A substrate processing device according to one embodiment of the present invention comprises: a chamber for providing a processing space formed therein; a susceptor which has a substrate placed at the upper part thereof and which is provided in the processing space; a gas supply port formed at a ceiling center part of a chamber so as to supply source gas to the processing space; an exhaust port which is formed on the sidewall of the chamber so as to be positioned at the outer lower part of the susceptor, and which allows exhaustion to be performed in the processing space from the central part of the susceptor to the edge of the susceptor; and an antenna positioned at the upper part of the susceptor, and provided outside the chamber so as to generate plasma from the source gas, wherein the upper part of the susceptor includes: a loading surface on which the substrate is placed; and a control surface, which is positioned at the perimeter of the loading surface, faces the processing space so as to be exposed to