COMPOSITION FOR RESIST UNDERLAYER, AND PATTERN FORMING METHOD USING SAME

The present invention relates to a composition for a resist underlayer, and a pattern forming method using same. According to one embodiment, the composition for a resist underlayer comprises: a polymer including, at an end, a structure represented by chemical formula 1, and including, in the main c...

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Bibliographische Detailangaben
Hauptverfasser:	PARK HYUN, GWON SOON-HYUNG, BAEK JAE-YEOL, CHOI YOO-JEONG, BAE SHIN-HYO, KIM MIN-SOO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a composition for a resist underlayer, and a pattern forming method using same. According to one embodiment, the composition for a resist underlayer comprises: a polymer including, at an end, a structure represented by chemical formula 1, and including, in the main chain, a structural unit represented by chemical formula 2 and a structural unit represented by chemical formula 3; and a solvent. Chemical formulae 1 to 3 are as defined in the specification. 本发明是有关于一种抗蚀剂底层组成物及一种使用所述组成物形成图案的方法。根据实施例，所述抗蚀剂底层组成物包含：聚合物，包括在末端处由化学式1表示的结构以及在主链中由化学式2表示的结构单元及由化学式3表示的结构单元；以及溶剂。化学式1至化学式3的定义与详细说明中所述的相同。