LID ASSEMBLY APPARATUS AND METHODS FOR SUBSTRATE PROCESSING CHAMBERS

The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to recei...

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Bibliographische Detailangaben
Hauptverfasser:	KEDLAYA DIWAKAR N, AGGARWAL SANJEEV, KUMARANKUTTY HANISH KUMAR PANAVALAPPIL, BANGALORE VIDYADHARAN SRINIVASA MURTHY, HUANG ZUBIN, DESAI PRASHANT A, NGUYEN THOAI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present disclosure relates to a lid assembly apparatus and related methods for substrate processing chambers. In one implementation, a lid assembly includes a gas manifold. The gas manifold includes a first gas channel configured to receive a process gas, a second gas channel configured to receive a doping gas, and a third gas channel configured to receive a cleaning gas. The lid assembly also includes a showerhead. The showerhead includes one or more first gas openings that are configured to receive the process gas, and one or more second gas openings that are configured to receive the doping gas. 本公开涉及一种用于基板处理腔室的盖组件设备及相关方法。在一个实施方式中，盖组件包括气体歧管。气体歧管包括被配置成接收工艺气体的第一气体通道、被配置成接收掺杂气体的第二气体通道、以及被配置成接收清洁气体的第三气体通道。盖组件还包括喷头。喷头包括被配置成接收工艺气体的一个或多个第一气体开口，以及被配置成接收掺杂气体的一个或多个第二气体开口。