Solar cell based on different black phosphorus-like materials, and preparation method thereof

The invention provides a novel heterojunction solar cell realized through different stacking structures of different black phosphorus materials. The heterojunction thin-film solar cell sequentially comprises five layers of structures from bottom to top: a substrate, an ITO coating, a double-layer AB...

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Bibliographische Detailangaben
Hauptverfasser: CHEN JIE, HUANG QING'AN, TU CHANGXIN, JIANG YUANCHANG, LEI SHUANGYING
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention provides a novel heterojunction solar cell realized through different stacking structures of different black phosphorus materials. The heterojunction thin-film solar cell sequentially comprises five layers of structures from bottom to top: a substrate, an ITO coating, a double-layer AB stack GeS, a double-layer rotary AD stack SnS and an upper electrode. The double-layer AB stack GeS and the double-layer rotary SnS-ADd stacking are combined to form an II-type semiconductor heterojunction, the double-layer rotary SnS of an AD structure is used as a donor, the energy band gap of the double-layer rotary SnS is 1.4654 eV, and the GeS of an AB structure is used as a receptor. The double-layer black phosphorus-like structures with different stacking structures are obtained through a mechanical stripping method. Under the irradiation of white light, the open-circuit voltage of the solar cell provided by the invention theoretically reaches 1.088 V, the short-circuit current density reaches 301.937 A/m ,