High-voltage MIS-HEMT device with composite layer structure

High-voltage MIS-HEMT device with composite layer structure

The invention provides a high-voltage MIS-HEMT device with a composite layer structure, which comprises a substrate, an AlxGa1-xN layer arranged on the substrate and intentionally doped with P-type impurities, an unintentionally doped GaN layer arranged on the AlxGa1-xN layer, a drain electrode arra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FAN ZHEN, JIANG XUANQING, LUO QIAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides a high-voltage MIS-HEMT device with a composite layer structure, which comprises a substrate, an AlxGa1-xN layer arranged on the substrate and intentionally doped with P-type impurities, an unintentionally doped GaN layer arranged on the AlxGa1-xN layer, a drain electrode arranged on the surface of the GaN layer and an unintentionally doped stripe-shaped AlyGa1-yN layer, x