SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

According to one embodiment, a semiconductor memory device includes: a semiconductor substrate including a first surface and a second surface; a first electrode and a second electrode provided on the first surface side of the semiconductor substrate; a third electrode and a fourth electrode provided...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SETO MOTOSHI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device includes: a semiconductor substrate including a first surface and a second surface; a first electrode and a second electrode provided on the first surface side of the semiconductor substrate; a third electrode and a fourth electrode provided on the second surface side of the semiconductor substrate; a first through electrode extending in the first direction and connected to the first electrode and the third electrode; a second through electrode extending in the first direction and connected to the second electrode and the fourth electrode; and a first insulating layer provided between the semiconductor substrate and the first through electrode and between the semiconductor substrate and the second through electrode. In addition, the first insulating layer includes: a first portion provided between the semiconductor substrate and the first through electrode; and a second portion provided between the semiconductor substrate and the second through electr