Tabletop high-power semiconductor device multi-layer composite film passivation structure

The invention discloses a tabletop high-power semiconductor device multi-layer composite film passivation structure, which structurally comprises a base, a rotating cavity, a coating device and a semiconductor device. When the tabletop high-power semiconductor device multi-layer composite film passivation structure is used, a semiconductor device is stably fixed to a rotating rod through a suction cup, a clamping rod is driven by a sleeving piece to conduct up-down position adjustment on a sliding adjusting rod, a coating assembly can be in direct contact with the semiconductor device, the position of the coating assembly is positioned and limited through a buckle so as to prevent the coating assembly from moving in the working process, glass cement is poured into the coating assembly through an input port, and the surface of the semiconductor device is evenly and stably coated with the glass cement through the coating assembly, so that the subsequent effective processing of the semiconductor device is ensure