高硼组分二维III族多元氮化物混合晶体及其制备方法

本发明公开了高硼组分二维III族多元氮化物混合晶体及其制备方法。该方法为低压化学气相沉积方法，设置级联式递进三温区结构，并于中段梯度温区进行加速混晶分子的气相预替位，实现高效可控二维混晶。本发明制备的高硼组分二维III族多元氮化物混合晶体表面平整性好，用于器件结构中的层间匹配度高，混合晶体中的硼组分高；可作为优良衬底用于制备高质量InAlGaN等多元氮化物半导体，制备性能优良的中子探测器、深紫外LED、深紫外探测器；可广泛应用于紫外固化光源、紫外光通信、紫外空气净化、紫外医疗、紫外水净化、紫外光解油烟等领域。 The invention discloses a high-boron component two-dimensional III group multi-element nitride mixed crystal and a preparation method thereof. The method is a low-pressure chemical vapor deposition method, a cascade type progressive three-temperature-zone structure is arranged, gas phase pre-displacement of accelerated mixed crystal molecules is carried out in a middle-section gradient temperature zone, and efficient controllable two-dimensional mixed crystal is achieved. The high-boron-component two-dimensional III-group multi-element nitride mixed crystal prepared by the preparation method disclosed by the invention is high in surface smoothness, high in interlayer matching degree when being used in a device structure, and high in boron component in the