Carbon dioxide-methane plasma high-temperature reforming device and high-temperature reforming method

The invention discloses a carbon dioxide-methane plasma high-temperature reforming device and a high-temperature reforming method. The device comprises a plasma jet device and a cooling device. The method comprises the following steps: a mixed gas of methane and carbon dioxide in a volume ratio of 1...

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Hauptverfasser: SONG SHANG, MENG XIANLIANG, CHU RUIZHI, ZHU ZHUJUN, LI YUSAI, JIANG XIAOFENG, LI WEISONG, LI XIAO, KONG HUIRU, YE ZEFU, WU GUOGUANG, YU SHI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses a carbon dioxide-methane plasma high-temperature reforming device and a high-temperature reforming method. The device comprises a plasma jet device and a cooling device. The method comprises the following steps: a mixed gas of methane and carbon dioxide in a volume ratio of 1: 4 is introduced into a plasma jet device for discharging, the power of a plasma torch is controlled to be 15KW, a methane-carbon dioxide plasma jet is generated and enters a reactor, reforming of methane-carbon dioxide plasma is achieved at the high temperature of 1200 DEG C, and meanwhile the plasma jet device is connected with a circulating cooling water system to protect refractory materials outside the reactor; and the synthesis gas generated by the reaction quickly enters a cooling pipe through a nozzle after being decompressed by a pressure port, and the synthesis gas is collected in the cooling pipe to detect the components of the synthesis gas. The reforming reaction does not need the participation of a c