RESISTIVE RANDOM ACCESS MEMORY WITH PREFORMED FILAMENTS

A method for fabricating a plurality of resistive random access memory (RRAM) cells includes providing a substrate including a memory medium arranged on an underlying layer; creating channel holes in the memory medium having a first critical dimension in a range from 1 nm to 20 nm; depositing switching material defining a filament of the RRAM cells in the channel holes; depositing a top electrode of the RRAM cells on the memory medium and the switching material; and separating the adjacent ones of the RRAM cells by etching the top electrode and the memory medium between adjacent ones of the channel holes. 一种用于制造多个电阻式随机存取存储器(RRAM)单元的方法包括：提供衬底，其包括布置在底层上的存储器介质；在所述存储器介质中建立通道孔，其具有1nm至20nm范围内的第一关键尺寸；在所述通道孔中沉积定义所述RRAM单元的纤丝的转换材料；在所述存储器介质和所述转换材料上沉积所述RRAM单元的顶电极；以及通过蚀刻所述通道孔中的相邻者之间的所述顶电极以及所述存储器介质，以分隔所述RRAM单元中的相邻者。