Semiconductor device and forming method thereof

The embodiment of the invention discloses a semiconductor device and a forming method thereof. In one embodiment, the semiconductor device includes: a power rail contact; an isolation region on the power rail contact; a first dielectric fin on the isolation region; a second dielectric fin adjacent to the isolation region and the power rail contact; a first source/drain region on the second dielectric fin; and a source/drain contact between the first source/drain region and the first dielectric fin, the source/drain contact connected to the first source/drain region and the power rail contact. 本发明的实施例公开了半导体器件及其形成方法。在一个实施例中，一种半导体器件包括：电源轨接触件；位于电源轨接触件上的隔离区；位于隔离区上的第一电介质鳍；邻近隔离区和电源轨接触件的第二电介质鳍；位于第二电介质鳍上的第一源极/漏极区；位于第一源极/漏极区和第一电介质鳍之间的源极/漏极接触件，源极/漏极接触件连接到第一源极/漏极区和电源轨接触件。