METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on the sidewalls of the sacrificial patterns, the sacrificial patterns are removed, leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patterns as etch masks, and second hard mask patterns are formed; and a fin structure is formed by patterning the substrate using the second hard mask patterns as etch masks. Each first sacrificial pattern has a tapered shape with a top smaller than a bottom. The embodiment of the invention also relates to a semiconductor device. 在制造半导体器件的方法中，在设置在衬底上方的硬掩模层上方形成牺牲图案，在牺牲图案的侧壁上形成侧壁图案，去除牺牲图案，从而留下侧壁图案作为第一硬掩模图案，通过使用第一硬掩模图案作为蚀刻掩模来图案化硬掩模层，从而形成第二硬掩模图案，并且通过使用第二硬掩模图案作为蚀刻掩模来图案化衬底，从而形成鳍结构。每个第一牺牲图案具有锥形形状，该锥形形状的顶部小于底部。本申请的实施例还涉及半导体器件。