Extreme ultraviolet lithography method, extreme ultraviolet mask and forming method thereof

In some embodiments, an extreme ultraviolet lithography method, an extreme ultraviolet mask and a method of forming the same are provided, the method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack including Mo layers and Si layers alternately stacked over a mask substrate; forming a ruthenium covering layer on the multilayer Mo/Si stack; doping the ruthenium covering layer with halogen elements, pentavalent elements, hexavalent elements or a combination thereof; forming an absorber layer over the ruthenium covering layer; etching the absorber layer to form a pattern in the absorber layer. 在一些实施例中，一种极紫外线微影方法、极紫外线遮罩及其形成方法，形成极紫外线(EUV)遮罩的方法包含形成多层Mo/Si叠层，此多层Mo/Si叠层包括在遮罩基材之上交替堆叠的Mo层及Si层；在多层Mo/Si叠层之上形成钌覆盖层；采用卤素元素、五价元素、六价元素、或其等的组合掺杂钌覆盖层；在钌覆盖层之上形成吸收层；蚀刻吸收层以在吸收层中形成图案。