PLASMA TREATMENT DEVICE
In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MORI MASAHITO YOKOGAWA KENETSU ARASE TAKAO KAJIFUSA HIROYUKI |
| description | In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed on an upper surface of a protruding section arranged at an upper center section of the sample stage. The sample stage is provided with: an electrode that is arranged inside and that is supplied with high-frequency electrical power while the wafer is being treated, as well as an electrode of a ring-shaped member that is formed of a conductor and that is arranged so as to surround the upper surface at an outer circumferential side of the protruding section of the sample stage; a first ring-shaped cover, formed of a dielectric, that is arranged so as to cover the ring-shaped member between this ring-shaped member and the treatment chamber and between this ring-shaped member and an upper surface of the sample stage; a |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113348732A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113348732A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113348732A3</originalsourceid><addsrcrecordid>eNrjZBAP8HEM9nVUCAlydQzxdfULUXBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGxsYmFubGRo7GxKgBANCHH2A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA TREATMENT DEVICE</title><source>esp@cenet</source><creator>MORI MASAHITO ; YOKOGAWA KENETSU ; ARASE TAKAO ; KAJIFUSA HIROYUKI</creator><creatorcontrib>MORI MASAHITO ; YOKOGAWA KENETSU ; ARASE TAKAO ; KAJIFUSA HIROYUKI</creatorcontrib><description>In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed on an upper surface of a protruding section arranged at an upper center section of the sample stage. The sample stage is provided with: an electrode that is arranged inside and that is supplied with high-frequency electrical power while the wafer is being treated, as well as an electrode of a ring-shaped member that is formed of a conductor and that is arranged so as to surround the upper surface at an outer circumferential side of the protruding section of the sample stage; a first ring-shaped cover, formed of a dielectric, that is arranged so as to cover the ring-shaped member between this ring-shaped member and the treatment chamber and between this ring-shaped member and an upper surface of the sample stage; a</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210903&DB=EPODOC&CC=CN&NR=113348732A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210903&DB=EPODOC&CC=CN&NR=113348732A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MORI MASAHITO</creatorcontrib><creatorcontrib>YOKOGAWA KENETSU</creatorcontrib><creatorcontrib>ARASE TAKAO</creatorcontrib><creatorcontrib>KAJIFUSA HIROYUKI</creatorcontrib><title>PLASMA TREATMENT DEVICE</title><description>In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed on an upper surface of a protruding section arranged at an upper center section of the sample stage. The sample stage is provided with: an electrode that is arranged inside and that is supplied with high-frequency electrical power while the wafer is being treated, as well as an electrode of a ring-shaped member that is formed of a conductor and that is arranged so as to surround the upper surface at an outer circumferential side of the protruding section of the sample stage; a first ring-shaped cover, formed of a dielectric, that is arranged so as to cover the ring-shaped member between this ring-shaped member and the treatment chamber and between this ring-shaped member and an upper surface of the sample stage; a</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAP8HEM9nVUCAlydQzxdfULUXBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGxsYmFubGRo7GxKgBANCHH2A</recordid><startdate>20210903</startdate><enddate>20210903</enddate><creator>MORI MASAHITO</creator><creator>YOKOGAWA KENETSU</creator><creator>ARASE TAKAO</creator><creator>KAJIFUSA HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20210903</creationdate><title>PLASMA TREATMENT DEVICE</title><author>MORI MASAHITO ; YOKOGAWA KENETSU ; ARASE TAKAO ; KAJIFUSA HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113348732A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MORI MASAHITO</creatorcontrib><creatorcontrib>YOKOGAWA KENETSU</creatorcontrib><creatorcontrib>ARASE TAKAO</creatorcontrib><creatorcontrib>KAJIFUSA HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MORI MASAHITO</au><au>YOKOGAWA KENETSU</au><au>ARASE TAKAO</au><au>KAJIFUSA HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA TREATMENT DEVICE</title><date>2021-09-03</date><risdate>2021</risdate><abstract>In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed on an upper surface of a protruding section arranged at an upper center section of the sample stage. The sample stage is provided with: an electrode that is arranged inside and that is supplied with high-frequency electrical power while the wafer is being treated, as well as an electrode of a ring-shaped member that is formed of a conductor and that is arranged so as to surround the upper surface at an outer circumferential side of the protruding section of the sample stage; a first ring-shaped cover, formed of a dielectric, that is arranged so as to cover the ring-shaped member between this ring-shaped member and the treatment chamber and between this ring-shaped member and an upper surface of the sample stage; a</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN113348732A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES |
| title | PLASMA TREATMENT DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T23%3A40%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MORI%20MASAHITO&rft.date=2021-09-03&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113348732A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |