PLASMA TREATMENT DEVICE

In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed...

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Bibliographische Detailangaben
Hauptverfasser:	MORI MASAHITO, YOKOGAWA KENETSU, ARASE TAKAO, KAJIFUSA HIROYUKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In order to provide a plasma treatment device capable of achieving stable plasma treatment characteristics, a sample stage is arranged at a lower section in a treatment chamber inside a vacuum container, a wafer to be treated by using the plasma is placed on the sample stage, said wafer being placed on an upper surface of a protruding section arranged at an upper center section of the sample stage. The sample stage is provided with: an electrode that is arranged inside and that is supplied with high-frequency electrical power while the wafer is being treated, as well as an electrode of a ring-shaped member that is formed of a conductor and that is arranged so as to surround the upper surface at an outer circumferential side of the protruding section of the sample stage; a first ring-shaped cover, formed of a dielectric, that is arranged so as to cover the ring-shaped member between this ring-shaped member and the treatment chamber and between this ring-shaped member and an upper surface of the sample stage; a