SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

The semiconductor device according to an embodiment of the present invention includes: a first chip that has a first semiconductor substrate, a first semiconductor element provided on the first semiconductor substrate, a first wiring layer connected to the first semiconductor element, and a first pad connected to the first wiring layer; and a second chip that has a second semiconductor substrate, a second semiconductor element provided on the second semiconductor substrate, a second wiring layer connected to the second semiconductor element, and a second pad connected to the second wiring layer and bonded to the first pad. At least one of the first pad and the second pad has a first metal layer that is bonded to the other pad, a second metal layer that has a coefficient of thermal expansion that is higher than that of the first metal layer, and a barrier metal layer that is provided between the first metal layer and the second metal layer. 一实施方式的半导体装置具备：第1芯片，具有第1半导体衬底、设置于第1半导体衬底的第1半导体元件、连接于第1半导体元件的第1配线层、及连接于第