P-type back contact crystalline silicon solar cell, preparation method and cell module

The invention is applicable to the technical field of solar cell processing and provides a P-type back contact type crystalline silicon solar cell, a preparation method and a cell assembly. The P-type back contact type crystalline silicon solar cell comprises a P-type silicon wafer, wherein a front...

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Hauptverfasser: CHEN GANG, SHAO JIAJUN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention is applicable to the technical field of solar cell processing and provides a P-type back contact type crystalline silicon solar cell, a preparation method and a cell assembly. The P-type back contact type crystalline silicon solar cell comprises a P-type silicon wafer, wherein a front surface of the P-type silicon wafer is provided with a passivation antireflection layer; p+ doped regions, N+ doped regions, a back passivation layer, a positive electrode and a negative electrode are arranged on a back surface of the silicon wafer substrate, and the P+ doped regions and the N+ doped regions are alternately distributed at intervals; the N+ doped region comprises a tunneling oxide layer arranged on a back surface of the P-type silicon wafer and N+ doped polycrystalline silicon arranged on the tunneling oxide layer; the position, corresponding to the negative electrode, of a back face of the P-type silicon wafer is provided with a suede structure, and the position, corresponding to the suede structur