SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

A substrate processing method according to an aspect of the present invention comprises the steps of: loading a substrate having a recess into a chamber; forming a nucleating layer containing tungsten (W) on the inner wall of the groove; forming a first tungsten block layer on the nucleating layer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM DONG-WOO, HAN TAE-SUNG, SUN WOO-HOON, YOON WON-JUN, CHOI SEOK-KYU, PARK JIN-WU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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