SUBSTRATE PROCESSING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME

A substrate processing method according to an aspect of the present invention comprises the steps of: loading a substrate having a recess into a chamber; forming a nucleating layer containing tungsten (W) on the inner wall of the groove; forming a first tungsten block layer on the nucleating layer, wherein the groove is partially filled with the first tungsten block layer; forming a crystal conversion layer on the first tungsten block layer; and forming a second tungsten block layer of which the grain size is relatively smaller than that of the first tungsten block layer on the crystal conversion layer so as to completely fill the groove. 本发明的一观点的基板处理方法包括如下的步骤：将具有凹槽的基板装载到腔室内；在所述凹槽的内壁上形成含钨(W)的成核层；在所述成核层上形成部分性填充所述凹槽内部的第一钨块体层；在所述第一钨块体层上形成晶体转换层；及在所述晶体转换层上形成晶粒尺寸相对小于所述第一钨块体层的第二钨块体层，以将所述凹槽内部全部填充。