Preparation method of silicon nanowire

The invention discloses a preparation method of a silicon nanowire. The preparation method comprises the following steps of: cleaning a silicon wafer by using a cleaning solution to obtain a cleaned silicon wafer; depositing a layer of metal film on the surface of the cleaned silicon wafer to obtain a deposited silicon wafer; carrying out annealing treatment on the deposited silicon wafer; immersing the annealed deposited silicon wafer in an etchant solution for corrosion treatment, wherein the etchant solution comprises an oxidizing agent, hydrofluoric acid and deionized water; and carrying out cleaning treatment and drying treatment on the deposited silicon wafer after corrosion treatment to obtain the silicon nanowire. According to the preparation method of the silicon nanowire, the preparation process is simple, the preparation cost can be effectively reduced, and the preparation efficiency can be effectively improved. 本发明公开了一种硅纳米线的制备方法，通过清洗液对硅片进行清洗，得到清洗后的硅片；在所述清洗后的硅片的表面上沉积一层金属膜，得到沉积硅片；对所述沉积硅片进行退火处理；将退火处理