Integrated circuit and method of forming integrated circuit

The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation the same. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. Two protection layers seq...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG SHENGHUANG, CHEN SHENGCHANG, ZHUANG XUELI, WANG HONGZHUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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