Integrated circuit and method of forming integrated circuit

The present disclosure relates to a magneto-resistive random access memory (MRAM) cell having an extended upper electrode, and a method of formation the same. In some embodiments, the MRAM cell has a magnetic tunnel junction (MTJ) arranged over a conductive lower electrode. Two protection layers sequentially surround a sidewall of the MTJ. The two protection layers have etch selectivity over one another. The embodiment of the invention also relates to an integrated circuit and a method of forming the integrated circuit. 本发明涉及具有延伸的上部电极的磁阻随机存取存储器(MRAM)单元及其形成方法。在一些实施例中，MRAM单元具有布置在导电下部电极上方的磁性隧道结(MTJ)。两个保护层依次围绕MTJ的侧壁。两个保护层彼此之间具有蚀刻选择性。本申请的实施例还涉及集成电路和形成集成电路的方法。