Semiconductor devices and methods of making the same

Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a semiconductor device includes a metal-insulator-metal structure which includes a bottom conductor plate layer including a first opening and a second opening, a first dielectric layer over the bottom conductor plate layer, a middle conductor plate layer over the first dielectric layer and including a third opening, a first dummy plate disposed within the third opening, and a fourth opening, a second dielectric layer over the middle conductor plate layer, and a top conductor plate layer over the second dielectric layer and including a fifth opening, a second dummy plate disposed within the fifth opening, a sixth opening, and a third dummy plate disposed within the sixth opening. The first opening, the first dummy plate, and the second dummy plate are vertically aligned. 提供了半导体器件、集成电路及其形成方法。在一个实施例中，半导体器件包括金属-绝缘体-金属结构，金属-绝缘体-金属结构包括：底部导体板层，包括第一开口和第二开口；第一介电层，位于底部导体板层上方；中间导体板层，位于第一介电层上方，并且包括第三开口、设置在第三开口内的第一伪