Semiconductor element and manufacturing method thereof

The invention discloses a semiconductor element and a manufacturing method thereof. The manufacturing method of a semiconductor element comprises the steps: firstly, providing a substrate which comprises a fin-shaped structure, and then forming a single diffusion isolation structure in the fin-shaped structure and dividing the fin-shaped structure into a first part and a second part; forming a gate material layer on the single diffusion isolation structure, patterning the gate material layer to form a first gate structure and a second gate structure on the single diffusion isolation structure, forming a gap wall surrounding the first gate structure and the second gate structure, forming a first source/drain region beside the first gate structure and a second source/drain region beside the second gate structure, and performing a metal gate replacement process to convert the first gate structure and the second gate structure into a first metal gate and a second metal gate. 本发明公开一种半导体元件及其制作方法，其中制作半导体元件的方法为：首先提供一