Forming method of hard mask laminated structure and semiconductor device

The embodiment of the invention discloses a hard mask laminated structure, which is used for a self-aligned dual composition process, and is characterized in that the hard mask laminated structure comprises a first hard mask layer and a core layer which are laminated, wherein the first hard mask layer comprises a diamond-like carbon layer, and the core layer comprises a spin-coated carbon-containing material layer. 本发明实施例公开了一种硬掩膜叠层结构，用于自对准双重构图工艺，其特征在于，所述硬掩膜叠层结构包括：层叠设置的第一硬掩膜层和核心层；其中，所述第一硬掩膜层包括类金刚石碳层，所述核心层包括旋涂的含碳材料层。