POLY-SI chemical vapor deposition process method for improving bonding of silicon wafer and quartz boat

The invention relates to the technical field of semiconductor processing. A POLY-SI chemical vapor deposition process method for improving adhesion of a silicon wafer and a quartz boat is characterized in that in the POLY-SI process of growing a thick film larger than 10000 Angstroms, the silicon wafer and a carrier boat are adhered due to growth of POLY-SI at a contact point position, the larger the POLY-SI thickness is, the larger the adhesion degree is, and then broken corners and broken edges are caused to generate cracks. According to the method, POLY-SI with 1/2 target film thickness is generated firstly, and after the POLY-SI is cooled in a nitrogen protection state, a silicon wafer is taken down from a boat through a manipulator and then put back to the boat, and POLY-SI with 1/2 target film thickness is left. And through intermittent growth and protection of a nitrogen state, adhesion of the boat and a silicon wafer in the thick film POLY-SI growth process is avoided, and growth of a natural oxide la