PE-CVD apparatus and method

The embodiment of the invention relates to PE-CVD equipment and a PE-CVD method. According to the present invention, there is provided a capacitively coupled plasma enhanced chemical vapor deposition (PE-CVD) apparatus, comprising: a chamber; a first electrode comprising a substrate support located in the chamber; a second electrode comprising a gas inlet structure in the chamber, the gas inlet structure comprising an edge region, a central region depending downward relative to the edge region, and one or more precursor gas inlets for introducing a PE-CVD precursor gas mixture into the chamber, both the edge region and the central region constitute part of the second electrode, where the precursor gas inlet is disposed in the edge region, and the central region is spaced apart from the substrate support to define a plasma dark space channel; and an RF power source connected to the air inlet structure to supply RF power thereto. 本申请的实施例涉及一种PE-CVD设备和方法。根据本发明，提供一种电容耦合的等离子体增强化学气相沉积PE-CVD设备，其包括：腔室；第一电极，其包括位于所述腔室中的