SOLAR CELL PREPARATION METHOD

The present invention relates to a solar cell preparation method. The method comprises the following steps: a polycrystalline silicon layer forming step for forming a polycrystalline silicon layer, containing a first dopant, on the rear surface of a semiconductor substrate which comprises a base reg...

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Hauptverfasser: KO JI-SOO, DO YOUNG-GU, CHANG WON-JAE, AN JUN-YONG, CHO HAE-JONG, CHEONG JU-HWA, KIM SUNG-JIN
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creator KO JI-SOO
DO YOUNG-GU
CHANG WON-JAE
AN JUN-YONG
CHO HAE-JONG
CHEONG JU-HWA
KIM SUNG-JIN
description The present invention relates to a solar cell preparation method. The method comprises the following steps: a polycrystalline silicon layer forming step for forming a polycrystalline silicon layer, containing a first dopant, on the rear surface of a semiconductor substrate which comprises a base region and is formed from a single crystal silicon material; a front surface texturing step for texturing the front surface of the semiconductor substrate and also removing the polycrystalline silicon layer formed on the front surface; a second conductive region forming step for forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate; a passivation film forming step for forming a first passivation film on the polycrystalline silicon layer formed on the rear surface of the semiconductor substrate and forming a second passivation film on the second conductive region on the front surface of the semiconductor substrate; and an electrode forming step for forming a
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN113302747A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN113302747A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN113302747A3</originalsourceid><addsrcrecordid>eNrjZJAN9vdxDFJwdvXxUQgIcg1wDHIM8fT3U_B1DfHwd-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGxsYGRuYm5o7GxKgBAI57IQM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SOLAR CELL PREPARATION METHOD</title><source>esp@cenet</source><creator>KO JI-SOO ; DO YOUNG-GU ; CHANG WON-JAE ; AN JUN-YONG ; CHO HAE-JONG ; CHEONG JU-HWA ; KIM SUNG-JIN</creator><creatorcontrib>KO JI-SOO ; DO YOUNG-GU ; CHANG WON-JAE ; AN JUN-YONG ; CHO HAE-JONG ; CHEONG JU-HWA ; KIM SUNG-JIN</creatorcontrib><description>The present invention relates to a solar cell preparation method. The method comprises the following steps: a polycrystalline silicon layer forming step for forming a polycrystalline silicon layer, containing a first dopant, on the rear surface of a semiconductor substrate which comprises a base region and is formed from a single crystal silicon material; a front surface texturing step for texturing the front surface of the semiconductor substrate and also removing the polycrystalline silicon layer formed on the front surface; a second conductive region forming step for forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate; a passivation film forming step for forming a first passivation film on the polycrystalline silicon layer formed on the rear surface of the semiconductor substrate and forming a second passivation film on the second conductive region on the front surface of the semiconductor substrate; and an electrode forming step for forming a</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=CN&amp;NR=113302747A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20210824&amp;DB=EPODOC&amp;CC=CN&amp;NR=113302747A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KO JI-SOO</creatorcontrib><creatorcontrib>DO YOUNG-GU</creatorcontrib><creatorcontrib>CHANG WON-JAE</creatorcontrib><creatorcontrib>AN JUN-YONG</creatorcontrib><creatorcontrib>CHO HAE-JONG</creatorcontrib><creatorcontrib>CHEONG JU-HWA</creatorcontrib><creatorcontrib>KIM SUNG-JIN</creatorcontrib><title>SOLAR CELL PREPARATION METHOD</title><description>The present invention relates to a solar cell preparation method. The method comprises the following steps: a polycrystalline silicon layer forming step for forming a polycrystalline silicon layer, containing a first dopant, on the rear surface of a semiconductor substrate which comprises a base region and is formed from a single crystal silicon material; a front surface texturing step for texturing the front surface of the semiconductor substrate and also removing the polycrystalline silicon layer formed on the front surface; a second conductive region forming step for forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate; a passivation film forming step for forming a first passivation film on the polycrystalline silicon layer formed on the rear surface of the semiconductor substrate and forming a second passivation film on the second conductive region on the front surface of the semiconductor substrate; and an electrode forming step for forming a</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAN9vdxDFJwdvXxUQgIcg1wDHIM8fT3U_B1DfHwd-FhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGxsYGRuYm5o7GxKgBAI57IQM</recordid><startdate>20210824</startdate><enddate>20210824</enddate><creator>KO JI-SOO</creator><creator>DO YOUNG-GU</creator><creator>CHANG WON-JAE</creator><creator>AN JUN-YONG</creator><creator>CHO HAE-JONG</creator><creator>CHEONG JU-HWA</creator><creator>KIM SUNG-JIN</creator><scope>EVB</scope></search><sort><creationdate>20210824</creationdate><title>SOLAR CELL PREPARATION METHOD</title><author>KO JI-SOO ; DO YOUNG-GU ; CHANG WON-JAE ; AN JUN-YONG ; CHO HAE-JONG ; CHEONG JU-HWA ; KIM SUNG-JIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN113302747A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KO JI-SOO</creatorcontrib><creatorcontrib>DO YOUNG-GU</creatorcontrib><creatorcontrib>CHANG WON-JAE</creatorcontrib><creatorcontrib>AN JUN-YONG</creatorcontrib><creatorcontrib>CHO HAE-JONG</creatorcontrib><creatorcontrib>CHEONG JU-HWA</creatorcontrib><creatorcontrib>KIM SUNG-JIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KO JI-SOO</au><au>DO YOUNG-GU</au><au>CHANG WON-JAE</au><au>AN JUN-YONG</au><au>CHO HAE-JONG</au><au>CHEONG JU-HWA</au><au>KIM SUNG-JIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLAR CELL PREPARATION METHOD</title><date>2021-08-24</date><risdate>2021</risdate><abstract>The present invention relates to a solar cell preparation method. The method comprises the following steps: a polycrystalline silicon layer forming step for forming a polycrystalline silicon layer, containing a first dopant, on the rear surface of a semiconductor substrate which comprises a base region and is formed from a single crystal silicon material; a front surface texturing step for texturing the front surface of the semiconductor substrate and also removing the polycrystalline silicon layer formed on the front surface; a second conductive region forming step for forming a second conductive region by diffusing a second dopant on the front surface of the semiconductor substrate; a passivation film forming step for forming a first passivation film on the polycrystalline silicon layer formed on the rear surface of the semiconductor substrate and forming a second passivation film on the second conductive region on the front surface of the semiconductor substrate; and an electrode forming step for forming a</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SOLAR CELL PREPARATION METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T01%3A08%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KO%20JI-SOO&rft.date=2021-08-24&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN113302747A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true