Two-dimensional perovskite single crystal and preparation method of detector based on ion implantation
The invention discloses a two-dimensional perovskite single crystal and a preparation method of a detector based on ion implantation. A two-dimensional perovskite precursor solution is sealed, insulated and heated to obtain a complete saturated solution of a precursor, and the complete saturated sol...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a two-dimensional perovskite single crystal and a preparation method of a detector based on ion implantation. A two-dimensional perovskite precursor solution is sealed, insulated and heated to obtain a complete saturated solution of a precursor, and the complete saturated solution transferred and placed in a constant temperature furnace is insulated and then heated; therefore, it is guaranteed that the initial growth temperature of crystals is lower than the temperature of a precursor solution, and single crystals can be separated out at the continuous and stable speed. And the forming quality of the crystal can be ensured by a relatively low cooling rate, and the crystal with a relatively large size can be obtained. The perovskite detector which is high in stability, excellent in light detection rate, large in carrier migration lifetime product and high in responsivity is obtained by injecting high-energy ions into the crystal, and the planar interdigital gold electrode enables the X- |
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