Improved polysilicon dummy technology to avoid short circuit

The invention discloses an improved polycrystalline silicon dummy technology for avoiding short circuit, and provides a fin transistor SRAM memory element and a method for manufacturing the same, which can prevent partial metal contact from being close to a dummy gate of an adjacent dummy edge unit from being damaged when the partial metal contact is close to the dummy gate of the adjacent dummy edge unit. The current is short-circuited between the metal contacts of the bit cell through the dummy gate. According to one embodiment of the invention, the length of one or more gate slots adjacent to bit cells is extended through an improved gate slot pattern, so that dummy gate lines close to metal contacts of active memory cells are patterned and sectioned in the process of patterning a gate layer. In another embodiment, during patterning of the gate layer, the distance between one or more dummy gates of adjacent active memory cells is adjusted such that the dummy gates within the dummy edge cells are away from