Hollow cathode ion plating method suitable for tin dioxide thin film with complex and damageable structure

The invention discloses a hollow cathode ion plating method suitable for a tin dioxide film with a complex and damageable structure. The method includes the steps: by taking solid tin dioxide particles as raw materials, and deflecting an argon flow generated by a plasma generator through a magnetic field to hit the surfaces of the tin dioxide particles, so that the tin dioxide particles are sublimated and deposited on a substrate. According to the solution of the invention, the tin dioxide thin film which is flat, compact and excellent in light transmission can be deposited on a silicon wafer or a glass substrate without any solvents or doping materials, and the average transmittance in a visible light area is close to 90%. The method is simple in preparation process and short in time, is capable of achieving large-area and large-scale preparation, and has good application prospects in the fields such as photoelectric detectors and solar cells. 本发明公开了一种适用复杂和易损结构的二氧化锡薄膜的空心阴极离子镀方法，该方法以固体二氧化锡颗粒作为原料，利用等离子体发生器发出的氩