Heterojunction photoelectric detector and preparation method thereof

The invention provides a method for preparing a novel photoelectric detector by using different double-layer stacking structures of different black phosphorus materials. The photoelectric detector comprises a substrate, a lower electrode, a double-layer GeS-AB stack (GeS-AB), a double-layer rotary SnS-AD stack (tSnS-AD) and an upper electrode. According to the invention, the double-layer GeS-AB stack and the double-layer rotary SnS-AD stack can form a II-type semiconductor heterojunction, the GeS-AB is an acceptor material, and the tSnS-AD is a donor material; the SnS material and the GeS material are relatively stable in air and do not easily react with oxygen; and a special electrode material is selected, so that the contact resistance is reduced, and the performance of the device is effectively improved. 本发明给出了一种使用不同类黑磷材料的不同双层堆垛结构来制备新型光电探测器的方法，该光电探测器包括衬底、下电极、双层GeS-AB堆垛(GeS-AB)、双层旋转SnS-AD堆垛(tSnS-AD)、上电极。本发明使用的双层GeS-AB堆垛和双层旋转SnS-AD堆垛能购成Ⅱ型半导体异质结，这里的GeS-AB为受体材料，而tSnS-AD为给体材料；且SnS材料和GeS材料在空气相对稳定，不容易和氧气发生反应；我们选用