ORGANIC PHOTODIODE AND INFRARED CMOS SENSOR

The present invention provides: an organic photodiode which has high photoelectric conversion efficiency, while having low dark current value; and an infrared CMOS sensor which uses this organic photodiode. An organic photodiode which sequentially comprises a first electrode, a hole transport layer, a photoelectric conversion layer and a second electrode in this order. The photoelectric conversion layer contains a p-type semiconductor and an n-type semiconductor. The hole transport layer contains a polymer compound which contains a repeating unit represented by formula (2). The polymer compound has a group which is mutually bonded to a carbon atom in a side chain of another polymer compound at 230 DEG C. 本发明提供一种光电转换效率高且暗电流值低的有机光电二极管和使用了该有机光电二极管的红外CMOS传感器。按顺序依次包含第一电极、空穴传输层、光电转换层和第二电极而成的有机光电二极管。该光电转换层包含p型半导体和n型半导体。该空穴传输层含有具有由下式(2)表示的重复单元的高分子化合物。该高分子化合物具有该高分子化合物间在230℃下相互与侧链碳原子进行键合的基团。