METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE HAVING NITROGEN DIFFUSED THEREIN

A method for making a semiconductor device may include the step of forming a superlattice layer and an adjacent semiconductor layer. The superlattice layer may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include the step of diffusing nitrogen into the superlattice layer. 制造半导体器件的方法可包括形成超晶格层和相邻的半导体层。该超晶格层可包括多个堆叠的层组，其中每个层组包含限定了基础半导体部分的多个堆叠的基础半导体单层，和被约束在相邻的基础半导体部分的晶体晶格内的至少一个非半导体单层。该方法还可包括将氮扩散至该超晶格层中。