METHOD AND APPARATUS FOR ON-CHIP STRESS DETECTION

A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locati...

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Bibliographische Detailangaben
Hauptverfasser: TOMAYER JOSHUA DANIEL, FREEMAN ERIC HIGGINS, TIBURZI MARCO-DOMENICO, PICCARDI MICHELE, MARR KENNETH WILLIAM, CERAFOGLI CHIARA
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A microelectronic chip device includes a semiconductor substrate and multiple on-chip strain sensors (OCSSs) constructed on the substrate at various locations of the substrate. The OCSSs may each include multiple piezoresistive devices configured to sense a strain at a location of the various locations and produce a strain signal representing the strain at that location. A strain measurement circuit may also be constructed on the semiconductor substrate and configured to measure strain parameters from the strain signals produced by the OCSSs. The strain parameters represent the strains at the various location. Values of the strain parameters can be used for analysis of mechanical stress on the chip device. 本发明提供一种微电子芯片装置,其包含:半导体衬底;及多个芯片上应变传感器(OCSS),其在所述衬底上构建在所述衬底的各个位置处。所述OCSS可各自包含经配置以感测所述各个位置中的位置处的应变且产生表示那个位置处的所述应变的应变信号的多个压阻装置。应变测量电路也可经构建在所述半导体衬底上且经配置以从由所述OCSS产生的所述应变信号测量应变参数。所述应变参数表示所述各个位置处的所述应变。所述应变参数的值可用于分析所述芯片装置上的机械应力。