F-type power amplifier based on optimized output matching structure and design method thereof

The invention discloses a F-type power amplifier based on an optimized output matching structure and a design method thereof. The F-type power amplifier at least comprises a transistor and an output matching network, the output matching network comprises a bias circuit, a fundamental wave matching c...

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Hauptverfasser: CHENG ZHIQUN, HUANG XIEBIN, LIU GUOHUA, WANG SONGYE, QIN ZE, JIAN YELONG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a F-type power amplifier based on an optimized output matching structure and a design method thereof. The F-type power amplifier at least comprises a transistor and an output matching network, the output matching network comprises a bias circuit, a fundamental wave matching circuit, a second harmonic control circuit and a third harmonic control circuit; wherein the fundamental wave matching circuit is of a T-shaped matching structure and comprises a third harmonic control circuit and a first microstrip line TL1; the first microstrip line TL1 is a common part of the fundamental wave matching circuit, the third harmonic control circuit and the second harmonic control circuit. Compared with the prior art, the optimized output matching network provided by the invention simplifies the structure of the output network of the class-F power amplifier, realizes the same broadband and high efficiency, reduces the size, and is beneficial to the realization of a multi-stage power amplification circ