Super-radiation light-emitting diode chip integrated with backlight detector, and preparation method thereof
The invention discloses a super-radiation light-emitting diode chip integrated with a backlight detector, and a preparation method thereof. The super-radiation light-emitting diode chip comprises an epitaxial wafer, an N-surface electrode layer is sputtered on the lower end surface of the epitaxial...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a super-radiation light-emitting diode chip integrated with a backlight detector, and a preparation method thereof. The super-radiation light-emitting diode chip comprises an epitaxial wafer, an N-surface electrode layer is sputtered on the lower end surface of the epitaxial wafer, a P-surface electrode layer is sputtered on the upper end surface of the epitaxial wafer, and the P-surface electrode layer comprises an active region electrode and a backlight detection region electrode. A ridge waveguide is arranged on the upper end face of the epitaxial wafer according to a preset angle, an isolation groove is further formed in the upper end face of the epitaxial wafer in the width direction of the epitaxial wafer to form an isolation area, the active area electrode is located on one side of the isolation groove to form an active area, and the backlight detection area is located on the other side of the isolation groove to form a backlight detection area. A passive absorption area is arra |
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