Manufacturing method and manufacturing apparatus of fast recovery chip and fast recovery chip
The invention discloses a manufacturing method and manufacturing apparatus of a fast recovery chip and a fast recovery chip. The manufacturing method comprises the steps of: carrying out phosphorus diffusion on a silicon wafer through a phosphorus source, so as to form a phosphorus diffusion structu...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a manufacturing method and manufacturing apparatus of a fast recovery chip and a fast recovery chip. The manufacturing method comprises the steps of: carrying out phosphorus diffusion on a silicon wafer through a phosphorus source, so as to form a phosphorus diffusion structure layer on at least one surface of the silicon wafer; removing the phosphorus diffusion structure layer on one surface of the silicon wafer; carrying out boron diffusion on the silicon wafer by using a boron source so as to form a boron diffusion structure layer on one surface, where the phosphorus diffusion structure layer is removed, of the silicon wafer; polishing the surface of the boron diffusion structure layer to form a first polished surface; performing platinum diffusion on the first polished surface by using a platinum source so as to form a platinum diffusion structure layer on the first polished surface; and preparing a fast recovery chip by adopting the silicon wafer subjected to platinum diffusion. T |
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