Manufacturing method and manufacturing apparatus of fast recovery chip and fast recovery chip

The invention discloses a manufacturing method and manufacturing apparatus of a fast recovery chip and a fast recovery chip. The manufacturing method comprises the steps of: carrying out phosphorus diffusion on a silicon wafer through a phosphorus source, so as to form a phosphorus diffusion structure layer on at least one surface of the silicon wafer; removing the phosphorus diffusion structure layer on one surface of the silicon wafer; carrying out boron diffusion on the silicon wafer by using a boron source so as to form a boron diffusion structure layer on one surface, where the phosphorus diffusion structure layer is removed, of the silicon wafer; performing platinum ion implantation through the surface of the boron diffusion structure layer to realize platinum diffusion; performing platinum deep diffusion in a preset temperature range; and preparing a fast recovery chip by adopting the silicon wafer subjected to the platinum deep diffusion. Platinum diffusion is carried out in an ion injection mode, tha