Ta2O5 ceramic target material and preparation method thereof

The invention provides a preparation method of a Ta2O5 ceramic target material. The method comprises the following steps that 1, low-temperature calcination and high-temperature calcination are sequentially carried out on Ta (OH) 5 powder to obtain Ta2O5 powder; the temperature of the low-temperatur...

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Hauptverfasser:	RAO XIAOFANG, LUO WEN, LIU BINGNING, ZUO NINGWEI, ZHENG WEIXING
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	The invention provides a preparation method of a Ta2O5 ceramic target material. The method comprises the following steps that 1, low-temperature calcination and high-temperature calcination are sequentially carried out on Ta (OH) 5 powder to obtain Ta2O5 powder; the temperature of the low-temperature calcination is 600-750 DEG C, the time of the low-temperature calcination is 3-6 hours, and the atmosphere of the low-temperature calcination is air atmosphere; the temperature of the high-temperature calcination is 800-1200 DEG C, the time of the high-temperature calcination is 2-8 hours, and the atmosphere of the high-temperature calcination is oxygen atmosphere; and 2, deionized water and a dispersing agent are added into the Ta2O5 powder, Ta2O5 slurry is obtained, then grinding, atomization granulation, agglomeration, mold pressing, cold isostatic pressing and normal-pressure oxygen atmosphere sintering are sequentially carried out, and the Ta2O5 ceramic target material for film coating is obtained. The inven